A Multiple-Valued Ferroelectric Content-Addressable Memory
نویسندگان
چکیده
A novel architecture f o r a Multiple-Valued Ferroelectric Content-Addressable Memory (FCAM) is proposed. An FCAM employs ferroelectric capacitors as storage elements to provide a nonvolatile content-addressable memory. A 2-bit search operation is performed by a simultaneous access to a 4-level polarization, hence reducing the total number of search operations to h a y Four FCAM structures are discussed in ternu of their speed, area, and implementation feasibility.
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تاریخ انتشار 1996